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CSD17304Q3 - N-Channel MOSFET

Datasheet Summary

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3-mm × 3.3-mm Plastic Package.

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Datasheet preview – CSD17304Q3

Datasheet Details

Part number CSD17304Q3
Manufacturer Texas Instruments
File Size 396.35 KB
Description N-Channel MOSFET
Datasheet download datasheet CSD17304Q3 Datasheet
Additional preview pages of the CSD17304Q3 datasheet.

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Full PDF Text Transcription

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CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17304Q3 RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage - V FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package APPLICATIONS • Notebook Point of Load • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
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