Datasheet Details
| Part number | CSD17306Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 384.18 KB |
| Description | N-Channel MOSFET |
| Download | CSD17306Q5A Download (PDF) |
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Overview: CSD17306Q5A www.ti.com SLPS253A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17306Q5A RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage -.
| Part number | CSD17306Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 384.18 KB |
| Description | N-Channel MOSFET |
| Download | CSD17306Q5A Download (PDF) |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 Text 4 Spacing RDS(on) vs VGS 16 14 ID = 22A 12 10 8 TC = 125°C 6 4 2 TC = 25°C 0 012345678 VGS - Gate-to-Source Voltage - V 9 10 G006 PRODUCT SUMMARY VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 11.8 nC Qgd Gate Charge Gate to Drain 2.4 nC VGS = 3V 4.2 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 3.3 mΩ VGS = 8V 2.9 mΩ VGS(th) Threshold Voltage 1.1 V ORDERING INFORMATION Device Package Media Qty CSD17306Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, Single Pulse ID = 74A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 100 24 155 3.2 UNIT V V A A A W –55 to 150 °C 274 mJ (1) Typical RqJA = 39°C/W on a 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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