Datasheet Details
| Part number | CSD17303Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 395.45 KB |
| Description | N-Channel MOSFET |
| Download | CSD17303Q5 Download (PDF) |
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Overview: CSD17303Q5 www.ti.com SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples:.
| Part number | CSD17303Q5 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 395.45 KB |
| Description | N-Channel MOSFET |
| Download | CSD17303Q5 Download (PDF) |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 18 Gate Charge Gate to Drain 4 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.1 V nC nC 2.7 mΩ 2 mΩ 1.7 mΩ V ORDERING INFORMATION Device Package Media Qty CSD17303Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 103A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 100 32 200 3.2 UNIT V V A A A W –55 to 150 °C 530 mJ (1) RqJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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