Datasheet Details
| Part number | CSD17302Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 383.72 KB |
| Description | N-Channel MOSFET |
| Download | CSD17302Q5A Download (PDF) |
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Overview: CSD17302Q5A www.ti.com SLPS216A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | CSD17302Q5A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 383.72 KB |
| Description | N-Channel MOSFET |
| Download | CSD17302Q5A Download (PDF) |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 5.4 Gate Charge Gate to Drain 1.2 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.2 V nC nC 9.5 mΩ 7.3 mΩ 6.4 mΩ V ORDERING INFORMATION Device Package Media Qty CSD17302Q5A SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 35A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 87 16 104 3 UNIT V V A A A W –55 to 150 °C 61 mJ (1) Typical RqJA = 41°C/W on a 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
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