CSD17309Q3 Datasheet | Texas Instruments

Features - 1 Optimized for 5 V Gate Drive - Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - SON 3.3 mm × 3.3 mm Plastic Package 2 Applications - Notebook Point of Load - Point of Load Synchronous Buck in Networking, Tele, and puting Systems 3 Description This 30 V, 4.2 mΩ Nex FET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. Top View S1 8D S2 7D S3 G4 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 3 V VGS = 4.5 V VGS = 8 V 6.3 4.9 4.2 UNIT V n C n C mΩ Device CSD17309Q3 CSD17309Q3T . Ordering...