CSD17381F4 Datasheet | Texas Instruments

Features - Ultra-low on-resistance - Ultra-low Qg and Qgd - Low threshold voltage - Ultra-small footprint (0402 case size) - 1.0 mm × 0.6 mm - Ultra-low profile - 0.36 mm height - Integrated ESD protection diode - Rated >4 k V HBM - Rated >2 k V CDM - Lead and halogen free - Ro HS pliant 2 Applications - Optimized for load switch applications - Optimized for general purpose switching applications - Single-cell battery applications - Handheld and mobile applications 3 Description This 90 mΩ, 30 V N-Channel Femto FET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . 0.36 mm Product Summary TA = 25°C TYPICAL VALUE Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain VGS = 1.8 V RDS(on) Drain-to-source on-resistance VGS = 2.5 V VGS = 4.5...