CSD17483F4 Datasheet | Texas Instruments

Features - 1 Low On-Resistance - Low Qg and Qgd - Low-Threshold Voltage - Ultra-Small Footprint (0402 Case Size) - 1.0 mm × 0.6 mm - Ultra-Low Profile - 0.35-mm Height - Integrated ESD Protection Diode - Rated > 4-k V HBM - Rated > 2-k V CDM - Lead and Halogen Free - Ro HS pliant 2 Applications - Optimized for Load Switch Applications - Optimized for General Purpose Switching Applications - Single-Cell Battery Applications - Handheld and Mobile Applications 3 Description This 200-mΩ, 30-V N-Channel Femto FET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. Typical Part Dimensions 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 370 240 200 UNIT V p C p C mΩ DEVICE CSD17483F4 CSD17483F4T Device...