Datasheet Details
| Part number | CSD17573Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 490.29 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17573Q5B-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17573Q5B SLPS492B – JUNE 2014 – REVISED APRIL 2017 CSD17573Q5B 30-V N-Channel NexFET™ Power MOSFETs.
| Part number | CSD17573Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 490.29 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17573Q5B-etcTI.pdf |
|
|
|
This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 49 11.9 VGS = 4.5 V VGS = 10 V 1.4 1.19 0.84 UNIT V nC nC mΩ V DEVICE CSD17573Q5B CSD17573Q5BT Device Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel SON 5.00-mm × 6.00-mm 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 30 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 76, L = 0.1 mH, RG = 25 Ω 332 43 400 3.2 195 –55 to 150 289 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
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