Datasheet Details
| Part number | CSD17576Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 475.10 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17576Q5B-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17576Q5B SLPS497A – JUNE 2014 – REVISED MAY 2017 CSD17576Q5B 30 V N-Channel NexFET™ Power MOSFET.
| Part number | CSD17576Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 475.10 KB |
| Description | 30V N-Channe Power MOSFET |
| Datasheet | CSD17576Q5B-etcTI.pdf |
|
|
|
This 30 V, 1.7 mΩ, SON 5 x 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain -to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 25 5.4 VGS = 4.5 V VGS = 10 V 1.4 2.4 1.7 UNIT V nC nC mΩ mΩ V Device CSD17576Q5B CSD17576Q5BT Ordering Information(1) Qty Media Package 2500 13-Inch Reel SON 5 × 6 mm 250 7-Inch Reel Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current (Package limited) VALUE 30 ±20 100 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current(1) 184 30 IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 400 3.1 125 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 150 EAS Avalanche Energy, single pulse ID = 48, L = 0.1 mH, RG = 25 Ω 115 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.
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