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CSD18502KCS
SLPS367B – AUGUST 2012 – REVISED JULY 2014
CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 2.4 mΩ, 40 V, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
52
8.4
VGS = 4.5 V 3.3
VGS = 10 V 2.4
1.8
UNIT
V
nC
nC
m
m
V
Device
CSD18502KCS
Ordering Information(1)
Package
Media Qty
TO-220 Plastic
Package
Tube
50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
40
±20
100
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID
TC = 25°C
212
A
Continuous Drain Current (Silicon limited),
TC = 100°C
150
IDM Pulsed Drain Current (1)
400
A
PD Power Dissipation
259
W
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175 °C
EAS
Avalanche Energy, single pulse
ID = 81 A, L = 0.1 mH, RG = 25
330
mJ
(1) Max RθJC = 0.6ºC/W, pulse duration 100 μs, duty cycle
1%
RDS(on) vs VGS
12
TC = 25°C Id = 100A
10
TC = 125ºC Id = 100A
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
ID = 100A
VDS = 20V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD18502KCS Datasheet Preview

CSD18502KCS Datasheet

Power MOSFETs

No Preview Available !

CSD18502KCS
SLPS367B – AUGUST 2012 – REVISED JULY 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (October 2012) to Revision B
Page
• Increased the TC = 25º continuous drain current to 212 A .................................................................................................... 1
• Increased the TC = 125º continuous drain current to 150 A .................................................................................................. 1
• Increased the pulsed drain current to 400 A ......................................................................................................................... 1
• Increased the max power dissipation to 259 W ..................................................................................................................... 1
• Increased the max operating junction and storage temperature to 175º ............................................................................... 1
• Updated the pulsed current conditions .................................................................................................................................. 1
• Updated Figure 1 from a normalized RθJA to an RθJC curve ................................................................................................... 4
• Updated Figure 6 to extend to 175°C .................................................................................................................................... 5
• Updated Figure 8 to extend to 175°C .................................................................................................................................... 5
• Updated the SOA in Figure 10 .............................................................................................................................................. 6
• Updated Figure 12 to extend to 175°C .................................................................................................................................. 6
Changes from Original (August 2012) to Revision A
Page
• Changed the Transconductance TYP value From: 149 S To: 138 S..................................................................................... 3
• Changed RθJA From: 65°C/W To: 62°C/W.............................................................................................................................. 3
2
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