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CSD18503KCS Datasheet Preview

CSD18503KCS Datasheet

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CSD18503KCS
SLPS368A – SEPTEMBER 2012 – REVISED JANUARY 2015
CSD18503KCS 40 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 40 V, 3.6 mΩ, TO-220 NexFET™ power
MOSFET has been designed to minimize losses in
power conversion applications.
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
40
30
4.6
VGS = 4.5 V 5.4
VGS = 10 V
3.6
1.9
UNIT
V
nC
nC
m
m
V
Device
CSD18503KCS
Ordering Information (1)
Package
Media Qty
TO-220 Plastic Package
Tube 50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
40
±20
100
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID
TC = 25°C
142
A
Continuous Drain Current (Silicon limited),
TC = 100°C
100
IDM Pulsed Drain Current (1)
358
A
PD Power Dissipation
188
W
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175 °C
EAS
Avalanche Energy, single pulse
ID = 57 A, L = 0.1 mH, RG = 25
162
mJ
(1) Max RθJC = 0.8ºC/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
16
TC = 25°C Id = 75A
14
TC = 125ºC Id = 75A
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
ID = 75A
VDS = 20V
8
6
4
2
0
0
5
10
15
20
25
30
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD18503KCS Datasheet Preview

CSD18503KCS Datasheet

Power MOSFETs

No Preview Available !

CSD18503KCS
SLPS368A – SEPTEMBER 2012 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 8
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (September 2012) to Revision A
Page
• Added part number to title ..................................................................................................................................................... 1
• Increased the TC = 25º continuous drain current to 142 A ..................................................................................................... 1
• Increased the TC = 125º continuous drain current to 100 A .................................................................................................. 1
• Increased the pulsed drain current to 358 A ......................................................................................................................... 1
• Increased the max power dissipation to 188 W ..................................................................................................................... 1
• Increased the max operating junction and storage temperature to 175ºC............................................................................. 1
• Updated the pulsed current conditions .................................................................................................................................. 1
• Updated Figure 1 from a normalized RθJA to an RθJC curve ................................................................................................... 4
• Updated Figure 6 to extend to 175°C .................................................................................................................................... 5
• Updated Figure 8 to extend to 175°C .................................................................................................................................... 5
• Updated the SOA in Figure 10 .............................................................................................................................................. 6
• Updated Figure 12 to extend to 175°C .................................................................................................................................. 6
2
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