Datasheet Details
| Part number | CSD18540Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 462.63 KB |
| Description | Power MOSFETs |
| Datasheet | CSD18540Q5B-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs.
| Part number | CSD18540Q5B |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 462.63 KB |
| Description | Power MOSFETs |
| Datasheet | CSD18540Q5B-etcTI.pdf |
|
|
|
This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 205 A Continuous Drain Current(1) 29 IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 400 A 3.8 W 188 TJ, Operating Junction, Tstg Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 80 A, L = 0.1 mH, RG = 25 Ω 320 mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
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