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CSD25480F3 Datasheet P-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity CSD25480F3 SLPS578A – APRIL 2016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET.

General Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 0.7 0.10 VGS = –1.8 V 420 VGS = –2.5 V 203 VGS = –4.5 V 132 VGS = –8.0 V 110 –0.95 UNIT V nC nC mΩ V DEVICE CSD25480F3 CSD25480F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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