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CSD25484F4T Datasheet P-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & munity CSD25484F4 SLPS551A – MAY 2015 – REVISED AUGUST 2017 CSD25484F4 –20-V P-Channel FemtoFET™ MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 1090 150 VGS = –1.8 V 405 VGS = –2.5 V 150 VGS = –4.5 V 93 VGS = –8.0 V 80 –0.95 UNIT V pC pC mΩ V DEVICE CSD25484F4 CSD25484F4T Device Information(1) QTY MEDIA PACKAGE 3000 7-Inch Reel 250 Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Low-Threshold Voltage.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.2-mm Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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