Datasheet Details
| Part number | LMG3410R150 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.54 MB |
| Description | GaN FET |
| Datasheet | LMG3410R150-etcTI.pdf |
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Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3411R150, LMG3410R150 SNOSD91B – MARCH 2019 – REVISED FEBRUARY 2020 LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and.
| Part number | LMG3410R150 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.54 MB |
| Description | GaN FET |
| Datasheet | LMG3410R150-etcTI.pdf |
|
|
|
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.
The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI.
These advantages enable dense and efficient topologies like the totempole PFC.
Compare LMG3410R150 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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