LMG3411R050 Datasheet - Texas Instruments

Integrated GaN Fet Power Stage

LMG3411R050 Features

* 1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles

* Enables high density power conversion designs

* Superior system performance over cascode or stand-alone GaN FETs

* Low inductance 8 mm x 8 mm QFN package for ease of d

LMG3411R050 General Description

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to .

LMG3411R050 Datasheet (1.54 MB)

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Datasheet Details

Part number:

LMG3411R050

Manufacturer:

Texas Instruments ↗

File Size:

1.54 MB

Description:

Integrated gan fet power stage.
Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R050, LMG3411R050 SNOSD81B SEPTEMBER 2018 .

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LMG3411R050 Integrated GaN Fet Power Stage Texas Instruments

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LMG3411R050 Features

LMG3411R050 General Description

Datasheet Details

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