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LMG3411R050 - Integrated GaN Fet Power Stage

Download the LMG3411R050 datasheet PDF. This datasheet also covers the LMG3410R050 variant, as both devices belong to the same integrated gan fet power stage family and are provided as variant models within a single manufacturer datasheet.

General Description

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

Key Features

  • 1 TI GaN FET reliability qualified with in-.

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Note: The manufacturer provides a single datasheet file (LMG3410R050-etcTI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for LMG3411R050 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LMG3411R050. For precise diagrams, and layout, please refer to the original PDF.

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG3410R050, LMG3411R050 SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020 LMG341xR050 60...

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11R050 SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020 LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features •1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and layout – Adjustable drive strength for switching performance and EMI control – Digital fault status output signal – Only +12 V unregulated supply needed • Integrated gate driver – Zero common source in

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