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LMG3411R050, LMG3410R050 Datasheet - Texas Instruments

LMG3411R050 Integrated GaN Fet Power Stage

The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to .

LMG3411R050 Features

* 1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles

* Enables high density power conversion designs

* Superior system performance over cascode or stand-alone GaN FETs

* Low inductance 8 mm x 8 mm QFN package for ease of d

LMG3410R050-etcTI.pdf

This datasheet PDF includes multiple part numbers: LMG3411R050, LMG3410R050. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

LMG3411R050, LMG3410R050

Manufacturer:

Texas Instruments ↗

File Size:

1.54 MB

Description:

Integrated gan fet power stage.

Note:

This datasheet PDF includes multiple part numbers: LMG3411R050, LMG3410R050.
Please refer to the document for exact specifications by model.

LMG3411R050 Distributor

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LMG3411R050 LMG3410R050 Integrated GaN Fet Power Stage Texas Instruments