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LMG3411R150, LMG3410R150
SNOSD91B
- MARCH 2019
- REVISED FEBRUARY 2020
LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection
1 Features
- 1 TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate...