LMG3422R030 - GaN FET

Product Overview

Texas Instruments

Datasheet Details

Part number	LMG3422R030
Manufacturer	Texas Instruments
File Size	2.73 MB
Description	GaN FET
Datasheet	LMG3422R030 Datasheet
Additional preview pages of the LMG3422R030 datasheet.

Product details

Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Features

Qualified for JEDEC JEP180 for hard-switching topologies.
600V GaN-on-Si FET with integrated gate driver.
Integrated high precision gate bias voltage.
200V/ns FET hold-off.
2.2MHz switching frequency.
20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
Operates from 7.5V to 18V supply.
Robust protection.
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

📁 Similar Datasheet

LMG32D - Visible LED Lamps (Titan)
LMG-128DI4-WUN1G - LCD (LANSER)
LMG-240EA1-WUN1G - LCD (LANSER)
LMG-SS16B80 - LCD Module (ETC)
LMG-SSC12A64 - Display Module (ETC)
LMG-SSC12A64Dxx - DOT MATRIX LIQUID CRYSTAL DISPLAY MODULE (ETC)
LMG122321A-BMDSWW-NN - LCD (Londtech)
LMG122321A-YTDSYW-NN - LCD (Londtech)

Other Datasheets by Texas Instruments

LMG3426R030 - GaN FET
LMG3410R050 - Integrated GaN Fet Power Stage
LMG3410R070 - GaN
LMG3410R150 - GaN FET
LMG3411R050 - Integrated GaN Fet Power Stage
LMG3411R070 - GaN

Published: Mar 28, 2024 |