LMG3426R030 - GaN FET

This page provides the datasheet information for the LMG3426R030, a member of the LMG3422R030 GaN FET family.

Product Overview

Texas Instruments

Datasheet Details

Part number	LMG3426R030
Manufacturer	Texas Instruments
File Size	2.73 MB
Description	GaN FET
Datasheet	LMG3426R030 Datasheet
Additional preview pages of the LMG3426R030 datasheet.

LMG3426R030 Product details

Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns.

Features

Qualified for JEDEC JEP180 for hard-switching topologies.
600V GaN-on-Si FET with integrated gate driver.
Integrated high precision gate bias voltage.
200V/ns FET hold-off.
2.2MHz switching frequency.
20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
Operates from 7.5V to 18V supply.
Robust protection.
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

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Published: Mar 28, 2024 |