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LMG3422R030 - GaN FET

General Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns.

Key Features

  • Qualified for JEDEC JEP180 for hard-switching topologies.
  • 600V GaN-on-Si FET with integrated gate driver.
  • Integrated high precision gate bias voltage.
  • 200V/ns FET hold-off.
  • 2.2MHz switching frequency.
  • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
  • Operates from 7.5V to 18V supply.
  • Robust protection.
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMG3422R030, LMG3426R030 SNOSDA7E – SEPTEMBER 2020 – REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2.2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.