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TPS1120 - DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Description

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems.

1.5 V and an IDSS of only 0.5 µA, the TPS1120

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Datasheet preview – TPS1120

Datasheet Details

Part number TPS1120
Manufacturer Texas Instruments
File Size 373.89 KB
Description DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
Datasheet download datasheet TPS1120 Datasheet
Additional preview pages of the TPS1120 datasheet.

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Full PDF Text Transcription

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TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS080A – MARCH 1994 – REVISED AUGUST 1995 D PACKAGE (TOP VIEW) 1SOURCE 1GATE 2SOURCE 2GATE 1 2 3 4 8 1DRAIN 7 1DRAIN 6 2DRAIN 5 2DRAIN description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.
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