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TPS1101 - SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

General Description

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET.

Texas Instruments LinBiCMOS™ process.

1.5 V and an IDSS of only 0.5

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN D PACKAGE description The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution PW PACKAGE in battery-powered systems by means of the Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.