Description
The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor.
Features
- extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of.
- 0.9 V and an IDSS of only.
- 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing
battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been
greatly enhanced over the standard 8-pin SOIC, further making.
TPS1110 Datasheet
