TPS1110 Datasheet Single P-channel Logic-level MOSFETs

Manufacturer: Texas Instruments

Overview: TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = – 4.5 V D High Current Capability 6 A at VGS = – 4.5 V D Logic-Level Gate Drive (3 V Compatible) VGS(th) = – 0.9 V Max D Low Drain-Source Leakage Current < 100 nA From 25°C to 75°C at VDS = – 6 V D Fast Switching . . . 5.

Datasheet Details

Part number	TPS1110
Manufacturer	Texas Instruments
File Size	223.07 KB
Description	SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
Datasheet	TPS1110-etcTI.pdf

General Description

The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor.

The device

Key Features

extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of.
0.9 V and an IDSS of only.
100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making.

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