TPS1100 Datasheet | Texas Instruments

TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω Typ at VGS = - 10 V D 3 V patible D Requires No External VCC D TTL and CMOS patible Inputs D VGS(th) = - 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of - 1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing...