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TPS1100 - SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

General Description

The TPS1100 is a single P-channel enhancement-mode MOSFET.

The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process.

1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-

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Other Datasheets by Texas Instruments

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TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern.