TPS1110Y Datasheet | Texas Instruments

TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = - 4.5 V D High Current Capability 6 A at VGS = - 4.5 V D Logic-Level Gate Drive (3 V patible) VGS(th) = - 0.9 V Max D Low Drain-Source Leakage Current < 100 nA From 25°C to 75°C at VDS = - 6 V D Fast Switching . . . 5.8 ns Typ td(on) D Small-Outline Surface-Mount Power Package SLVS100B - OCTOBER 1994 - REVISED JANUARY 1998 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN description The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device Features extremely low-rDS(on) values coupled with logic-level gate-drive...