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TPS1110Y - SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

Download the TPS1110Y datasheet PDF. This datasheet also covers the TPS1110 variant, as both devices belong to the same single p-channel logic-level mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor.

Key Features

  • extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of.
  • 0.9 V and an IDSS of only.
  • 100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TPS1110-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
TPS1110 SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
TPS1100 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = – 4.5 V D High Current Capability 6 A at VGS = – 4.5 V D Logic-Level Gate Drive (3 V Compatible) VGS(th) = – 0.9 V Max D Low Drain-Source Leakage Current < 100 nA From 25°C to 75°C at VDS = – 6 V D Fast Switching . . . 5.8 ns Typ td(on) D Small-Outline Surface-Mount Power Package SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN description The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of – 0.