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TPS1101Y - SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Download the TPS1101Y datasheet PDF. This datasheet also covers the TPS1101 variant, as both devices belong to the same single p-channel enhancement-mode mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET.

Texas Instruments LinBiCMOS™ process.

1.5 V and an IDSS of only 0.5

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TPS1101-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
TPS1101 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1110 SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN D PACKAGE description The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution PW PACKAGE in battery-powered systems by means of the Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.