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TPS1101Y Datasheet Single P-channel Enhancement-mode MOSFETs

Manufacturer: Texas Instruments

Overview: TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET.

The device has been optimized for 3-V or 5-V power distribution PW PACKAGE in battery-powered systems by means of the Texas Instruments LinBiCMOS™ process.

With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern.

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