Datasheet Summary
TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low rDS(on) . . . 0.09 Ω Typ at VGS =
- 10 V D 3 V patible D Requires No External VCC D TTL and CMOS patible Inputs D VGS(th) =
- 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
SLVS079C
- DECEMBER 1993
- REVISED AUGUST 1995
D PACKAGE (TOP VIEW)
SOURCE SOURCE SOURCE
GATE
1 2 3 4
8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN
D PACKAGE description
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution
PW PACKAGE in battery-powered systems by means of the
Texas Instruments LinBiCMOS™...