10N60 Datasheet | Nell Power Semiconductor

DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57n C max.) Low reverse transfer capacitance (CRSS = 18p F typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature TO-220AB (10N60A) GDS TO-220F (10N60AF) TO-263(D2PAK) (10N60H) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(n C) max. 10 600 0.8 @ VGS = 10V 57 D (Drain) G (Gate) S (Source) .nellsemi. Page 1 of 9 SEMICONDUCTOR 10N60 Series RRoo HHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ IDM IAR EAR EAS dv/dt Gate to Source voltage Continuous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TC=25°C TC=100°C IAR=10A, RGS=50Ω, VGS=10V IAS=10A, L = 14.2m...