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4N60 Datasheet - nELL

N-Channel Power MOSFET

4N60 Features

* RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB

4N60 General Description

The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC .

4N60 Datasheet (452.42 KB)

Preview of 4N60 PDF

Datasheet Details

Part number:

4N60

Manufacturer:

nELL

File Size:

452.42 KB

Description:

N-channel power mosfet.

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4N60 N-Channel Power MOSFET nELL

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