8N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
The Nell 8N60 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(36nC max.)
Low reverse transfer capacitance
(CRSS = 12pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
1.2 @ VGS = 10V
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
VGS Gate to Source voltage
ID Continuous Drain Current
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=8A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 7.1mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
1.6mm from case
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