NP4886BD6 mosfet equivalent, 40v dual n-channel enhancement mode mosfet.
* VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance .
General Features
* VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V
* Excel.
Schematic diagram
The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
General Features
* VDS =40V，ID =20A RDS(O.
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