S
* VDS =60V ID =8A RDS(ON)(Typ.)=15mΩ @VGS=10V RDS(ON)(Typ.)=16.5mΩ @VGS=4.5V
* Lead free product is acquired
* Surface mount package Application 100%.

Schematic diagram The NP8N06 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) a.

NP80N03CDE

NP80N03CLE

NP80N03DDE

NP80N03DLE

NP80N03EDE

NP80N03ELE

NP80N03KDE

NP80N03KLE

NP80N03MDE

NP80N03MLE

NP80N03NDE

NP80N03NLE

NP80N04CHE