PBSS4160PAN transistor equivalent, 1a npn/npn low vcesat (biss) transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduc.
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g..
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