NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4160PANP.
PNP/PNP complement: PBSS5160PAP.
Key Features
Very low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain hFE at high IC.
Reduced Printed-Circuit Board (PCB) requirements.
High energy efficiency due to less heat generation.
Full PDF Text Transcription for PBSS4160PAN (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PBSS4160PAN. For precise diagrams, and layout, please refer to the original PDF.
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS...
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eral description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circu
PBSS4160PAN Datasheet
