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PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High current capability High efficiency due to less heat
generation
AEC-Q101 qualified
Smaller Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Supply line switching circuits Battery management applications
DC-to-DC conversion
1.4 Quick reference data
Table 1.
PBSS5350D Datasheet
