* I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual
PBSS5350SS Datasheet (661.67 KB)
PBSS5350SS
661.67 KB
Pnp/pnp transistor.
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General descr.
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