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PBSS5350TH Datasheet PNP transistor

Manufacturer: Nexperia

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

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Overview

PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Higher efficiency leading to less heat genereation.
  • High temperature.