PBSS5350TH Datasheet - nexperia

PNP transistor

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* High collector current gain (hFE) at high IC

* Higher efficiency leading to less heat genereation

* High temperature applications up to 175 °C

* AEC-Q10

PBSS5350TH

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Pnp transistor.

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PBSS5350TH PNP transistor nexperia

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