PMDPB95XNE2 Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDPB95XNE2 Key Features
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
- EletroStatic Discharge (ESD) protection > 2 kV HBM
PMDPB95XNE2 Applications
- Charging switch for portable devices
- DC-to-DC converters