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PMV15ENEA - N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2).
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription for PMV15ENEA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PMV15ENEA. For precise diagrams, and layout, please refer to the original PDF.

PMV15ENEA 30 V, N-channel Trench MOSFET 16 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (T...

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nel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.

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