Datasheet4U Logo Datasheet4U.com

PMV75UP - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability: Ptot = 1000 mW 3.

📥 Download Datasheet

Datasheet preview – PMV75UP

Datasheet Details

Part number PMV75UP
Manufacturer nexperia
File Size 724.80 KB
Description P-channel Trench MOSFET
Datasheet download datasheet PMV75UP Datasheet
Additional preview pages of the PMV75UP datasheet.

📁 Similar Datasheet

  • PMV117EN - uTrenchMOS enhanced logic level FET (NXP)
  • PMV117EN - N-Channel MOSFET (VBsemi)
  • PMV130ENEA - N-channel Trench MOSFET (NXP)
  • PMV160UP - 1.2A P-channel Trench MOSFET (NXP Semiconductors)
  • PMV16UN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV170UN - single N-channel Trench MOSFET (NXP Semiconductors)
  • PMV185XN - MOSFET (NXP)
  • PMV20XN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV213SN - uTrenchMOS standard level FET (NXP)
  • PMV22EN - N-channel Trench MOSFET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 1000 mW 3. Applications • LED driver • Power management • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.
Published: |