PE40N12 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =40V,ID =150A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.
PE40N12
General Features
* VDS =40V,ID =150A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density .
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