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PE40P07S - P-Channel Enhancement Mode Power MOSFET

General Description

The PE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-40V,ID =-6.2A RDS(ON).

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Datasheet Details

Part number PE40P07S
Manufacturer semi one
File Size 943.49 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE40P07S Datasheet

Full PDF Text Transcription (Reference)

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http://www.semi-one.com Pb Free Product PE40P07S P-Channel Enhancement Mode Power MOSFET Description The PE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.