PE40N65 Overview
The PE40N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
PE40N65 Key Features
- VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load Switching