Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE40N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =40V,ID =150A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin...