Datasheet Summary
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Pb Free Product
P-Channel Enhancement Mode Power MOSFET
Description
The PE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-40V,ID =-13A RDS(ON) <12mΩ @ VGS=-10V
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
- DC-DC converter
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device...