PE40N65 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.
PE40N65
General Features
* VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
* High density cell design for ultra low.
Image gallery
Download