logo

PE80H13 Datasheet, semi one

PE80H13 mosfet equivalent, n-channel enhancement mode power mosfet.

PE80H13 Avg. rating / M : 1.0 rating-16

datasheet Download

PE80H13 Datasheet

Features and benefits


* VDS =80V,ID =130A RDS(ON) <6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stabi.

Application

General Features
* VDS =80V,ID =130A RDS(ON) <6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
.

Image gallery

PE80H13 Page 1 PE80H13 Page 2 PE80H13 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts