PE8810 - N-Channel Enhancement Mode Power MOSFET

Product Overview

semi one

Part number	PE8810
Manufacturer	semi one
File Size	967.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8810 Datasheet
Additional preview pages of the PE8810 datasheet.

The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

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Published: Dec 3, 2018 |