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PE8810A - N-Channel Enhancement Mode Power MOSFET

Download the PE8810A datasheet PDF. This datasheet also covers the PE8810A-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE8810A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 8A RDS(ON) < 16mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 18mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8810A-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8810A
Manufacturer ChipSourceTek
File Size 746.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8810A Datasheet

Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE8810A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8810A General Features ● VDS = 18V, ID = 8A RDS(ON) < 16mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 18mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.
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