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PE8816 - N-Channel Enhancement Mode Power MOSFET

Description

The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE8816
Manufacturer ChipSourceTek
File Size 1.01 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8816 Datasheet

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Full PDF Text Transcription

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PE8816 N-Channel Enhancement Mode Power MOSFET Description The PE8816 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 18V, ID = 9A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.
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