Part PE8810
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 967.98 KB
semi one
PE8810

Overview

The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM is ESD protested.

  • VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Schematic diagram Marking and pin Assignment