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PE8810 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: semi one

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Datasheet Details

Part number PE8810
Manufacturer semi one
File Size 967.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Download PE8810 Download (PDF)

General Description

The PE8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

General

Overview

PE8810 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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