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PE8813 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: PE8813 N-Channel Enhancement Mode Power MOSFET.

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Datasheet Details

Part number PE8813
Manufacturer semi one
File Size 733.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Download PE8813 Download (PDF)

General Description

The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

General

Key Features

  • VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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