semi one PE8813
The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.| Part No. | PE8813 |
|---|---|
| Datasheet | PE8813 Download |
| Manufacturer |  semi one |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram Marking and pin assignment Application
●PWM application
●Load switch TSSOP-8 top view
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical
