Part PE8813
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 733.54 KB
semi one
PE8813

Overview

The PE8813 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM is ESD protested.

  • VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Schematic diagram Marking and pin assignment